features l higher sensitivity and low dark current than conventional type l sensitivity matching with bgo and csi (ti) scintillators l high quantum efficiency: qe=85 % ( =540 nm) l low capacitance l high-speed response l high stability l good energy resolution applications l scintillation detectors l calorimeters l hodoscopes l tof counters l air shower counters l particle detectors, etc. photodiode si pin photodiode large area sensors for scintillation detection S3590-08/-09 1 general ratings / absolute maximum ratings absolute maximum ratings active area depletion layer thickness type no. window material (mm) (mm) reverse voltage v r max. power dissipation p (mw) operating temperature topr (c) storage temperature ts t g (c) S3590-08 epoxy resin s3590-09 window-less 10 10 0.3 100 100 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s dark current i d = p type no. spectral response range (nm) peak sensitivity wavelength p (nm) (a/w) lso 420 nm (a/w) bgo 480 nm (a/w) csi(tl) 540 nm (a/w) short circuit current isc 100 lx (a) typ. ( na) max. (na) te m p . coefficient of i d t cid (tim es/c) c ut-off frequency fc (mhz) te r m in a l capacitance ct f= 1mhz (pf) nep v r =70 v (w/hz 1/2 ) S3590-08 0.66 0.20 0.30 0.36 s3590-09 320 to 1100 960 0.66 0.22 0.33 0.41 100 2 * 6 * 1.12 40 * 40 * 3.8 10 -14 * v r =70 v
si pin photodiode S3590-08/-09 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. 0.45 lead photosensitive surface active area 5.0 ?0.2 1.25 10 1.78 ?0.2 0.7 10.0 10.0 white ceramic 14.5 1.4 12.7 + 0 - 0.5 + 0 - 0.5 the coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. cat. no. kpin1052e06 oct. 2007 dn wavelength (nm) photo sensitivity (a/w) 0 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1200 1000 0.6 0.7 (typ. ta=25 ?c) 0 temperature coefficient ( %/ ? c ) 200 400 600 800 1000 +1.0 +0.5 (typ.) +1.5 -0.5 wavelength (nm) reverse voltage (v) (typ. ta=25 ? c, f=1 mhz) terminal capacitance 1 0.1 10 pf 100 pf 10 nf 1 nf 10 100 1000 spectral response reverse voltage (v) dark current 100 pa 0.1 1 10 1000 100 1 na 10 na 100 na (typ. ta=25 ? c) 10 na 1 a 10 pa 100 pa 1 na 100 na dark current (typ. v r =70 v) ambient temperature ( ? c) 06080 20 40 dimensional outline (unit: mm) photo sensitivity temperature characteristic dark current vs. reverse voltage dark current vs. ambient temperature terminal capacitance vs. reverse voltage kpinb0231eb kpinb0093ed kpinb0233ed kpinb0232ec kpinb0234ec kpina0014ef kpinb0263eb wavelength (nm) photo sensitivity (a/w) 0 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1200 1000 0.6 0.7 (typ. ta=25 ? c) qe =100 % 2 s3590-09 S3590-08
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